METHOD FOR COMPARATIVE ASSESSMENT OF SEMICONDUCTOR RELIABILITY Russian patent published in 2013 - IPC G01R31/26 

FIELD: electricity.

SUBSTANCE: invention is related to microelectronics and namely to methods for quality and reliability control of semiconductors and it can be used for comparative assessment of batches of semiconductors both at the stage of their production and at the stage of incoming inspection at plants manufacturing electronic equipment. Essence of the invention is that with two equal size samples from comparable batches of semiconductors of the same type measurements of noise voltage square values $${\overline{U}}_n^2$$ are made at frequencies of 160 and 1000 Hz before and after impact of electrostatic charge permitted as per technical specifications for only a half of the samples and for the second half - by ESD equal to a half of the permitted value. For each article the parameter γ is determined before and after ESD impact as per the following formula: $$\gamma =\frac{Lg\left(\frac{{\overline{U}}^2{}_{n160}}{{\overline{U}}^2{}_{n1000}}\right)}{Lg\left(\frac{1000}{160}\right)}$$ , where $${\overline{U}}_{n160}^2$$ and U² _n1000 is a value of low-frequency noise and frequencies of 160 Hz and 1000 Hz respectively; γ values are used for comparison of batches as per their reliability.

EFFECT: enlarging functional capabilities of the method.

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