METHOD OF SEMICONDUCTOR ARTICLE CLASSIFICATION BY RELIABILITY Russian patent published in 2014 - IPC G01R31/26 

FIELD: physics.

SUBSTANCE: proposed method consists in measurement of noise intensity $$\overline{U_n^2}$$ of semiconductor article lot in two frequencies, i.e. 200 Hz and 1000 Hz. Noise spectrum shape index γ is calculated by the formula: $$\gamma =\frac{\lg \left(\frac{\overline{U_n^2}{f}_1}{\overline{U_n^2}{f}_2}\right)}{\lg \left(\frac{f_2}{f_1}\right)},$$ where $$\overline{U_n^2}{f}_1$$ and $$\overline{U_n^2}{f}_2$$ are noise r.m.s. value square in frequencies f₁ and f₂. Articles are subjected to X-ray radiation in dose set by specifications to measure, again, the noise intensity and to calculate spectrum shape index γ₂. Magnitude of factor M equal to M=γ₂/γ₁ is used to divide said lot into reliable and potentially unreliable articles.

EFFECT: higher validity.

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