METHOD OF DETERMINING CHARGE STATE OF ATOMS IN SUBNANOLAYER FILMS ON SURFACE OF METALS AND SEMICONDUCTORS Russian patent published in 2014 - IPC G01N23/207 

FIELD: physics.

SUBSTANCE: surface of an analysed object is irradiated with low-energy ions of inert gases; the energy spectrum of ions reflected from the surface is recorded; the energy position and values of peaks of adatoms of the subnanolayer film and peaks of atoms of the adsorbent (substrate) in the energy spectrum of the reflected ions are measured; the types of adatoms and atoms of the substrate are determined from the energy position of the peaks in the spectrum; said measurements are then taken on a test object with different concentrations of adatoms in the range from a pure surface of the adsorbent (substrate) to one monoatomic layer; the relationship between values of peaks of the test substrate and adatoms and the concentration of adatoms is then determined; concentration of adatoms on the surface of the analysed object is then determined from the ratios of the values of peaks of adatoms and the substrate of the analysed object and the test object, respectively. Spectra for pure bulk substrate materials and adatoms on linear extrapolation are then used to determine the values of peaks for the determined concentrations; the charge state of adatoms and atoms of the substrate (adsorbent) is then determined from the ratios of the measured peaks of adatoms and the substrate of the analysed object to the linearly extrapolated values of peaks.

EFFECT: reduced depth of the analysed layer and high accuracy of analysis results.

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