METHOD OF ETCHING OF CONTACT PLATFORM OF BUILT PHOTOCONVERTER DIODE Russian patent published in 2016 - IPC H01L31/18 

FIELD: photography.

SUBSTANCE: invention relates to production of three-stage photoconverters with integrated diode. According to invention, at three-stage semiconductor structure GaInP/GaAs/Ge, grown on a germanium substrate with p-AlGaInP layer potential barrier, by p⁺⁺-AlGaAs and n⁺⁺-GaInP tunnel junction layers of the upper stage a photoresist mask is created with windows of face contacts of the photoconverter and diode, followed with removing semiconductor layers in diode window mask, wherein the p-AlGaInP layer of potential barrier is completely or partially removed in a mixture of concentrated hydrochloric and hydrofluoric acids in quantity /volume ratio of 5÷7 and 3÷5 respectively, p⁺⁺-AlGaAs layer of tunnel junction is removed in a mixture of concentrated hydrochloric and citric (50 %) acids in quantity/volume ratio of 6÷10 and 8÷12 respectively.

EFFECT: technical result consists in improvement of uniformity and reproducibility of the etching process as well as improved parameters of the built-in diode.

1 cl, 2 dwg, 1 tbl