FIELD: electronic equipment.
SUBSTANCE: invention can be used in electronic industry for converting light energy into electrical energy. Method of making a photoconverter with an integrated diode involves forming, on a germanium substrate with grown epitaxial layers of a three-stage structure, a photoresist mask with windows under the front contacts of the photoconverter and the integrated diode, etching of a diode pad, sputtering of metal coating layers based on silver, removal of a photoresist, creation of a photoresist mask with windows for mesa-insulation of the photoconverter and built-in diode, etching of the mesa with simultaneous removal of epitaxial growths on rear side of the germanium substrate, removal of the photoresist, sputtering layers of rear metallization based on silver, annealing contacts, opening an optical window by etching, deposition of antireflection coating, disk cutting of the epitaxial structure, rectification of the photoconverter with an integrated diode by cooling in nitrogen vapor, after deposition of layers of front metal coating and removal of the photoresist, the photoresist mask is created for mesa-insulation with an additional pattern in form of islands located opposite the contact pads of the photoconverter with an integrated diode, in addition, when etching out the mesa, removing the layer of the germanium substrate in a solution of tetramethylammonium hydroxide, hydrogen peroxide and water is carried out, then, after contacts annealing, the metal-coated substrate is straightened by cooling in nitrogen vapors, then disk cutting of the epitaxial structure is performed, then, after opening of the optical window, antireflection coating is sputtered, and after straightening the photoconverter with an integrated diode chemical-dynamic etching is carried out in solution of tetramethylammonium hydroxide, hydrogen peroxide and water in the quantitative ratio of components 1÷1.5 wt%, 10÷20 wt%, 89÷78.5 wt% respectively.
EFFECT: invention increases output of non-defective photoconverters, high electrical parameters and reliability of photoconverters.
1 cl, 6 dwg, 1 tbl
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Authors
Dates
2019-04-16—Published
2017-01-30—Filed