METHOD OF OBTAINING FINELY DISPERSIVE POLYCRYSTALLINE SILICON CARBIDE Russian patent published in 2014 - IPC C01B31/36 

FIELD: chemistry.

SUBSTANCE: method of obtaining polycrystalline silicon carbide includes metal-thermal reduction of mixture of tetrachlorides of silicon and carbon, taken in molar ratio 1:1, by sodium. Mixture of chlorides of silicon and carbon is supplied into reactor cooled to (-5)-(-20)°C. Removal of excess sodium and formed sodium chloride is realised by leaching with subacid HCL solution at pH=5÷6.5.

EFFECT: increased dispersibility and homogeneity of polycrystalline silicon carbide powder, increased content of bound carbon.

5 ex, 2 tbl