FIELD: micro-system equipment.
SUBSTANCE: invention relates to micro-system engineering and specifically to production of nonvolatile electromechanical memory elements with movable electrodes. According to method insulating dielectric layer and doped layer of silicon are applied on substrate in form of silicon monocrystalline plate, then fixed and movable electrodes are simultaneously formed in plane of applied insulating dielectric and doped silicon layers parallel to substrate plane. Width of movable electrode must not be more than double thickness of insulating dielectric layer. Width of fixed electrodes shall be equal to no less than four times thickness of insulating dielectric layer.
EFFECT: technical result is reduction of labour intensity, higher reliability of electromechanical memory element with movable electrodes.
1 cl, 2 dwg
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