METHOD OF CREATING SHALLOWLY-LYING NANOSIZED ALLOYED LAYERS IN SILICON Russian patent published in 2014 - IPC H01L29/00 

FIELD: chemistry.

SUBSTANCE: method of creating shallowly-lying nanosized alloyed layers in silicon includes application on silicon of a thin film of a chemical compound of an alloyed element from a gas phase, irradiation of the obtained structure by a beam of ions and removal of the film residues from the surface; novelty of the method consists in carrying out the process directly in a chamber of ionic irradiation with preliminary cooling the silicon substrate to a temperature lower than the temperature of melting of the chemical compound of the alloyed element, with application of the thin film on silicon from the gas phase being carried out by input in the chamber of ionic irradiation of a gaseous chemical compound of the alloyed element and removal of the film residues after ionic irradiation at the said temperature by heating the silicon substrate.

EFFECT: simplification of technology with simultaneous improvement of quality of created shallowly-lying nanosized alloyed layers in silicon.

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