FIELD: electricity.
SUBSTANCE: this invention relates to the field of semiconductor devices and instruments manufacturing and can be used to form р-n junctions in silicon. Essence of invention: in the method for р-n junction forming in silicon chip that includes treatment of chip surface by ion beam, the chip surface is treated by a beam of ions that are non-doping for the plate. This method provides for simpler, cheaper, and more chemically pure process of p-n junction forming in silicon sample due to the use of the new physical effect of quick low-temperature redistribution of impurity in semiconductor.
EFFECT: simpler, cheaper, and more chemically pure process of р-n junction forming in silicon.
11 cl, 2 dwg
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