FIELD: electrical engineering.
SUBSTANCE: invention relates to the field of technologies for creating photocathodes. According to the invention, in a photocathode based on AIIIBV compound, a In0.52Al0.48As/In0.53Ga0.47As structure matched to the crystal lattice parameters is used as an emitter layer, in which a thin protective layer of InGaAs with a thickness of up to 50 nm is used on the InAlAs surface.
EFFECT: improved quantum efficiency QE of the photocathode, increased the heating temperature during evacuation of the devices, and improved quality of the image obtained from the photocathode.
1 cl, 2 dwg
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