METHOD OF GANG BONDING OF CRYSTALS IN ASSEMBLING HIGHLY-DENSE ELECTRONIC MODULES Russian patent published in 2014 - IPC H01L21/50 

FIELD: chemistry.

SUBSTANCE: in a method of gang bonding of crystals in assembling highly-dense electronic modules an intermediate carrier with a mirror presentation of alignment marks and temporary footprints of crystals on an operating side is manufactured, an intermediate carrier is fixed in a contact photolithography installation with an alignment system in such a way that the operating side of the carrier faces downwards, the crystal is placed with an active side upwards on a working table under the respective temporary footprint, the crystal is positioned relative to the alignment marks on the intermediate carrier, brought in contact with the carrier and fixed due to a glue layer adhesion, fixation is repeated for other crystals, the intermediate carrier with a required set of crystals is removed from the contact photolithography installation and fixed on a microcommutation board blank, after which the intermediate carrier is dismantled from the crystal surface.

EFFECT: increased manufacturability of the process of a multi-crystal electronic module assembling and an accuracy of the crystal positioning relative to the footprints, an alignment of planes of active surfaces of crystals with the plane of the upper surface of the microcommutation board.

4 cl, 6 dwg