MAGNETORESISTIVE SENSOR OF MOVEMENTS Russian patent published in 2014 - IPC G01B7/00 H01L43/08 

Abstract RU 2528116 C2

FIELD: measurement equipment.

SUBSTANCE: invention relates to measurement devices and may be used in integral linear and angular accelerometers and gyroscopes as a motion sensor. Substance: the magnetoresistive sensor comprises a plate of conducting monosilicon, in which a movable object is made with the help of anisotropic etching. At different sides of the end of the movable object there are discrete sources of magnetic field, which are located opposite to the four-layer magnetoresistive structures placed at different sides of the conducting monosilicon plate. Four-layer magnetoresistive structures are made of the first free ferromagnetic layer, the second conducting non-magnetic layer, the third fixed ferromagnetic layer and the fourth anti-ferromagnetic layer. Two free and two fixed ferromagnetic layers are combined into a four-arm bridge.

EFFECT: increased accuracy of a zero signal of a motion converter.

4 dwg

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RU 2 528 116 C2

Authors

Gavrilov Aleksandr Aleksandrovich

Shipunov Andrej Nikolaevich

Vavilov Vladimir Dmitrievich

Dates

2014-09-10Published

2012-12-19Filed