FIELD: electricity.
SUBSTANCE: in the method of manufacturing gallium antimonide with a large specific electrical resistance including growing gallium antimonide by epitaxy on a substrate of gallium antimonide, the process of growing gallium antimonide is carried out by gas phase epitaxy from organometallic compounds at a temperature in the range from 550 to 620°C, when the content of antimony atoms is exceeded in relation to the content of gallium atoms in the gas phase, 20-50 times.
EFFECT: creation of a method for the industrial manufacture of GaSb with a large specific electrical resistance.
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