FIELD: electricity.
SUBSTANCE: method for manufacture of active field semiconductor or optoelectronic device with non-volatile memory involves inclusion of paper containing natural fibres on the basis of pulp, synthetic fibres or their combination into composition of dielectric; the above fibres are placed to ion-exchange resin or glue and cationic particles, e.g. of aluminium are added for the purpose of electronegativity regulation. At that the above fibres remain discreet and they are connected chemically or mechanically; a layer of active semiconductor is applied to the above paper with thickness at least ten times less than thickness of fibre structure of the above paper.
EFFECT: using paper as substrate and basis for active component for electronic device with non-volatile memory.
15 cl, 3 dwg
