FIELD: nanotechnology.
SUBSTANCE: invention relates to the field of nanotechnology, describes a method of electrochemical surface structuring of materials and can be used in manufacture of microelectronic elements, single-layer and multilayer printed boards, optical elements, and other thin film structures. The essence of the invention consists in carrying out galvanic treatment of material while simultaneous irradiation of the surface of the working electrode by X radiation.
EFFECT: possibility of local (with the accuracy to 10 nm) acceleration/deceleration of the processes occurring at the interface of electrode/electrolyte.
9 cl, 5 dwg
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