FIELD: physics.
SUBSTANCE: application: for manufacture of lithographic mask. Topological X-ray absorbing pattern is formed on working surface of bearing membrane, at that identical topological X-ray absorbing pattern from the same material (or combination of materials), of the same thickness and spatially matched with the first one is also formed on the opposite side of bearing membrane.
EFFECT: minimisation of geometric deformation of lithographic mask both initial one and in process of exposure.
5 cl, 4 dwg
| Title | Year | Author | Number |
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|
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RU2704673C1 |
