FIELD: chemistry.
SUBSTANCE: method includes forming a protective coating on a semiconductor substrate by pulsed condensation of electroerosion arc carbon plasma with particle energy of not more than 50 eV at vacuum pressure of not more than 5∗10-4 Pa and substrate temperature not higher than 25°C. A non-crystalline carbon film is deposited through a curvilinear plasma-optical system which does not have a line of sight between plasma generation and condensation regions, with part of the magnetic field lines closing at the anode of the generator. Magnetic flux inside the generator is less than the magnetic flux through the plasma-optical system.
EFFECT: when generating and transporting the carbon plasma, conditions are created which ensure the absence of macroparticles, non-ionised vapour, high-energy carbon ions and impurities of foreign elements on the condensation surface.
3 cl
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