SEMICONDUCTOR GROWING METHOD AND SEMICONDUCTOR DEVICE Russian patent published in 2014 - IPC C23C16/44 H01L21/205 

FIELD: electricity.

SUBSTANCE: group of inventions is related to semiconductor materials. A method (version 1) includes provision of a reaction chamber, a semiconductor substrate, a precursor gas or precursor gases, epitaxial CVD growing of a doped semiconductor material at the substrate in the reaction chamber in order to form the first layer, blowing of the reaction chamber with a gas mixture including hydrogen and halogen-containing gas with reduction of dopant memory effect without removal of the respective precipitated layer from the reaction zone and epitaxial CVD growing of the doped semiconductor material at the above substrate in the reaction chamber in order to form the second layer. The semiconductor device contains the semiconductor material received by the above method. The method (version 2) includes introduction of a new semiconductor substrate in the above reaction chamber after the above blowing process and epitaxial CVD growing of the doped semiconductor material at the above new semiconductor substrate.

EFFECT: reproducibility of electrical properties during growing of semiconductor materials.

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