RING OSCILLATOR BASED ON TRANSISTORS WITH METAL-INSULATOR-SEMICONDUCTOR (MIS) STRUCTURE Russian patent published in 2015 - IPC H03B5/00 

Abstract RU 2538312 C1

FIELD: electricity.

SUBSTANCE: invention is related to the area of computation engineering and may be used in clock systems for microprocessor units. The ring oscillator based on transistors with MIS structure contains an uneven number of in series inverters, at that output of the last inverter is coupled to output of the first one, the first inverting element containing in series transistors of p-type and n-type, which connection point is the output of the inverting element, and the second inverting element is identical to the first one, gates of p-transistors of the first and second inverting elements are coupled to input and output of one of the inverters respectively, a gate of n-transistor of the first inverting element is coupled to output of the second inverting element and the gate of n-transistor of the second inverting element is coupled to output of the first inverting element, at that outputs of the inverting elements are the device outputs.

EFFECT: expansion of functionality by generating signals of meander-trapezoid shape besides sinusoidal signals.

2 dwg

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RU 2 538 312 C1

Authors

Lementuev Vladimir Anufrievich

Dates

2015-01-10Published

2013-11-22Filed