ADJUSTMENT OF THRESHOLD VOLTAGE DUE TO MODIFICATION OF DIELECTRIC MULTILAYER GATE STRUCTURE Russian patent published in 2015 - IPC H01L29/49 H01L21/336 

FIELD: electricity.

SUBSTANCE: invention relates to field transistor having various threshold voltages due to modification of the dielectric multilayer gate structure. Semiconductor structure contains the first field transistor having first multilayer gate structure that includes first dielectric of gate having high dielectric constant exceeding 4.0, section of metal gate, at least one metal section and first conducting section of gate material, and second field transistor having the second multilayer gate structure that contains the second dielectric of gate with high dielectric constant exceeding 4.0, at least one dielectric metal-oxide section and second conducting section of gate material; at that the first field transistor and the second field transistor have different threshold voltages.

EFFECT: invention ensures optimal work characteristics of devices at optimal level of power consumption.

12 cl, 12 dwg