NANOSCALE SENSOR OF ELECTRIC POTENTIAL ON FIELD EFFECT Russian patent published in 2023 - IPC G01N27/414 G01R27/22 H01L29/739 B82Y30/00 

FIELD: electrical engineering.

SUBSTANCE: invention relates to semiconductor devices, in particular to semiconductor sensors of an electric potential, allowing for measurements with high spatial resolution on a surface of solids and liquids, as well as in a volume of liquids, including liquids contained inside living organisms and other biological structures. A nanoscale sensor of an electric potential on a field effect is a quartz or glass needle-shaped tube containing two longitudinal channels and narrowing at one of ends to a diameter from 20 to 500 nm. On the narrowing end of the tube, which is a flat platform perpendicular to the axis of the tube, a sensitive element is placed, made in the form of sequentially applied semiconductor material layer and protective dielectric layer chemically inert to a tested medium. Two measuring electrodes are connected to semiconductor material, which are made of a carbon layer applied to inner walls of longitudinal channels of the tube, galvanically isolated from each other with a dielectric wall, and connected to an external electrical resistance meter.

EFFECT: invention provides an increase in stability of characteristics, chemical inertia, and sensor sensitivity due to formation of a transistor structure for measuring an electric potential on a field effect.

4 cl, 2 dwg