APPARATUS FOR ION-PLASMA ETCHING AND DEPOSITING THIN FILMS Russian patent published in 2015 - IPC C23C14/48 C23C14/32 H01J37/34 

FIELD: physics.

SUBSTANCE: invention relates to vacuum deposition of thin films and can be used, for example, in microelectronics. The apparatus comprises a vacuum chamber and a magnetic system. The vacuum chamber accommodates an anode which is in the form of a hollow rectangular parallelepiped, where a target and a substrate holder are placed in openings in the base of said anode. Two spiral thermionic cathodes are placed opposite each other near open ends, said cathodes having semicircular reflectors which close the ends. Magnetically controlled sliding valves are placed parallel to the target and the substrate. The magnetic system is in the form of two solenoids coupled by a magnetic conductor and placed near the reflectors outside the chamber. The length of the thermionic cathode l, the distance between the target and the substrate holder h, the distance between the cathodes L and the diameter of the target d are selected based on the relationships: 0.13L≤h≤0.3L; 0.45L≤d; l=1.14d.

EFFECT: invention improves uniformity of ionic current density distribution on the surface of the target and the stream of the deposited material, which improves the quality of films while improving efficiency of the apparatus.

3 cl, 1 dwg