DEVICE FOR ION-PLASMA SPUTTERING Russian patent published in 2019 - IPC C23C14/35 

FIELD: technological processes.

SUBSTANCE: invention relates to application of metal and semiconductor films in vacuum by alternating or simultaneous spraying of applied material and can be used for coating parts used in products of electronic, instrument-making and optical industries. Device for ion-plasma sputtering of films contains a vacuum chamber, in which there is an anode, a thermal cathode, a target and a substrate holder, and a magnetic system located outside the vacuum chamber and made in the form of Helmholtz rings. Anode and thermal cathode are arranged in separate recesses, at that in open end face of heat cathode niche there is a screen having narrow hole with size of 80×15 mm, the substrate is located parallel to the target and is equipped with a magnetically controlled gate. Screen equipped with a movable shutter is installed above the target. Target has cooling system.

EFFECT: enabling increase in the installation functional capabilities, which increases the films quality, increases productivity, ensures the process high efficiency, including enables to spray three different materials in one technological cycle by separate monolayers and their alloys.

1 cl, 2 dwg