LIGHT-EMITTING DIODE Russian patent published in 1995 - IPC

FIELD: optoelectronics. SUBSTANCE: light-emitting diode includes film InAsSbP of n type of conductance and p-n junction. It is supplemented with film InAsSb with p-n junction arranged in it mated with narrow-zone surface of film InAsSbP 60-90 μ thick. Butt faces of diode are chipped away by planes converging in center at angle a. Films InAsSb and InAsSbP are produced in the form of ball layers with matched curvature centers. N-region of InAsSb bordering on InAsSbP has thickness 2-4 m. Periods of lattices in both films grow linearly in direction from curvature center with gradient and are tied up with diffusion length L of electrons in p-InAsSb by relationship . Angle α between chipped away faces satisfies condition , where c = 7,10·10^-6 μ, b is length of p-n junction confined between faces of structure. Light-emitting diode has quantum output of l = 3,9 μ which is several times higher than output of known light-emitting diodes. EFFECT: increased quantum output in region of waves longer than 3.9 m thanks to stimulated mode of operation of light-emitting diode. 1 dwg