GALLIUM ARSENIDE BUFFER AMPLIFIER Russian patent published in 2022 - IPC H03F3/16 

FIELD: analogue microelectronics.

SUBSTANCE: invention relates to analogue microelectronics and can be used as a gallium arsenide output stage of a power amplifier of various analogue devices, allowing operation in conditions of penetrating radiation, low and high temperatures. Gallium arsenide buffer amplifier comprises device input (1) and output (2), first (3) and second (5) input field-effect transistors with control p-n junction, reference current source (6), first (4) and second (7) power supply buses, potential matching circuit (10) and output p-n-p transistor (11). Reference current source (6) is made on additional field-effect transistor (8) with control p-n junction. Source through first (9) additional resistor and the gate of the additional field-effect transistor (8) are connected to second (7) power supply bus. Drain of the additional field-effect transistor (8) is the second output of the reference current source (6), is connected to the source of first (3) input field-effect transistor through a potential matching circuit (10) and is connected to the base of the output p-n-p transistor (11). Drains of first (3) and second (5) input field-effect transistors are matched with first (4) power supply bus. Gate of second (5) input field-effect transistor is connected to the gate of first (3) input field-effect transistor and input (1) of the device, and the source is connected to the emitter of the output p-n-p transistor (11) and output (2) of the device. First output of the reference current source (6) and the collector of the output p-n-p transistor (11) are matched with second (7) power supply bus.

EFFECT: design of a buffer amplifier implemented only on JFET gallium arsenide field-effect transistors with a control p-n junction and bipolar GaAs p-n-p transistors.

3 cl, 5 dwg