FIELD: physics.
SUBSTANCE: disclosed is a method of obtaining a relief on the surface of light-emitting crystals of semiconductor light-emitting diodes using local erosion action on the surface. According to the invention, erosion is carried out through the optical-thermal action of pulsed laser radiation which penetrates the crystal, with an absorption depth in the crystal close to the erosion depth, and duration of laser pulses shorter than the propagation time of the thermal wave for heating the crystal at the erosion depth. The laser radiation pulse energy is not less than a value which leads to surface evaporation of the crystal.
EFFECT: high efficiency of radiation of light-emitting diodes.
2 cl, 1 tbl, 1 dwg
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