METHOD OF PRODUCING DIFFERENT TYPES OF SILICON CARBIDE SURFACE MORPHOLOGY Russian patent published in 2020 - IPC B82Y40/00 H01L33/34 

FIELD: technological processes.

SUBSTANCE: invention relates to production of micro- and nanostructures of silicon carbide surface. Method of obtaining various types of silicon carbide surface morphology involves placing a sample of silicon carbide in a cell with a working fluid, placing the cuvette on a coordinate table with subsequent orientation, focusing and ablation of silicon carbide surface by pulsed laser radiation. According to the invention, the silicon carbide sample is placed into the cuvette by partial immersion, wherein the laser radiation in the spectrum which is transparent to silicon carbide, simultaneously on the frontal and conjugated with the working liquid of the rear surface of the crystal, generating heat flux sources which cause local heating and erosion of the crystal, wherein the composition of the working fluid and operating conditions of the laser radiation are selected based on the required morphology of the silicon carbide surface, and the erosion products from the back surface of the crystal are removed by the working fluid.

EFFECT: method enables to obtain a different morphology of the treated silicon carbide surface with a high quality index when using the same equipment and technical means for realizing the method, only the composition of the working fluid and the operating modes of the laser radiation vary.

1 cl, 1 ex, 2 dwg