FIELD: physics, optics.
SUBSTANCE: this invention relates to production of nanostructures on silicon carbide surface. Production of nanostructures on silicon carbide surface comprises the steps that follow. Solid target is placed on silicon carbide surface and into working cell with fluid to be arranged onto indexer. Laser ablation is performed with the help of Nd:YAG laser operated in pulse mode. Note here that said laser irradiates said solid target with UV radiation in wavelength of 355 nm with pulse length of 10 ns and pulse repetition rate of 50 kHz at mean power of 3.5 W. Water purified in reverse osmosis system is used as working fluid.
EFFECT: higher transmission factor.
2 dwg
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