FIELD: physics.
SUBSTANCE: disclosed light-emitting device has a substrate, a buffer layer formed on the substrate, a first layer from n-type semiconductor formed on the buffer layer, a second layer from p-type semiconductor and an active layer between the first and second layers. The first, second and active layers form an interlacing of the layers with zinc blende phase structure and layers with wurtzite phase structure forming heterophase boundaries in between.
EFFECT: increase in efficiency of the light-emitting device owing to that there are heterophase boundaries in the light-emitting device which allow to avoid formation of potential wells for holes, increase the uniformity of hole distribution in the active layer and to ensure suppression of nonradiative Auger recombination.
11 cl, 5 dwg
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