FIELD: chemistry.
SUBSTANCE: in the process of growing epitaxial film of group three nitride on growth substrate 1 used is polymorphic carbon buffer layer 4, located between substrate 1 and epitaxial film 3 and consisting of mixture of polycrystalline carbon with mainly vertically oriented basal planes 5, polycrystalline carbon with mainly horizontally oriented basal planes 6 and amorphous carbon 7.
EFFECT: application of polymorphic carbon buffer layer makes it possible, on one hand, to reduce mechanical tension, arising because of discrepancy of parameters of crystalline grids between epitaxial film and substrate, and prevent cracking of epitaxial films, and on the other hand, it does not lead to highly strong mechanical connection of substrate with grown film, which provides its easy separation from substrate.
8 cl, 4 dwg, 9 ex
| Title | Year | Author | Number |
|---|---|---|---|
| METHOD OF GROWING EPITAXIAL LAYERS OF SEMICONDUCTOR CRYSTALS OF GROUP THREE NITRIDES ON LAYERED CRYSTALLINE STRUCTURE | 2013 |
|
RU2543215C2 |
| METHOD FOR LASER SEPARATION OF EPITAXIAL FILM OR LAYER OF EPITAXIAL FILM FROM GROWTH SUBSTRATE OF EPITAXIAL SEMICONDUCTOR STRUCTURE (VERSIONS) | 2011 |
|
RU2469433C1 |
| METHOD OF MAKING SEMICONDUCTOR DEVICE STRUCTURES BASED ON BLANK SUBSTRATE CLONING (VERSIONS) | 2013 |
|
RU2546858C1 |
| LIGHT-EMITTING DEVICE WITH HETEROPHASE BOUNDARIES | 2010 |
|
RU2434315C1 |
| SEMICONDUCTOR LIGHT-EMITTING DEVICE | 2011 |
|
RU2494498C2 |
| SEMICONDUCTOR LIGHT EMITTING DEVICE WITH AN AXIS OF SYMMETRY | 2014 |
|
RU2577787C2 |
| METHOD OF SEPARATING SURFACE LAYER OF SEMICONDUCTOR CHIP (VERSIONS) | 2010 |
|
RU2459691C2 |
| METHOD FOR MANUFACTURING OF SEMICONDUCTOR DEVICE | 2008 |
|
RU2368031C1 |
| METHOD FOR MANUFACTURE OF POWERFUL SHF TRANSISTOR | 2013 |
|
RU2534442C1 |
| HEAVY-DUTY PSEUDOMORPHIC SHF SWITCH | 2014 |
|
RU2574808C2 |
