FIELD: process engineering.
SUBSTANCE: invention relates to separation of semiconductor chip surface layer. In compliance with first version, focused laser beam is directed onto chip so that its focus is located at layer separation plane perpendicular to beam axis and displaced to scan layer separation plane in direction of chip exposed side surface and deep down to make continuous cutout. In compliance with second version, focused laser beam is directed onto chip so that focus is located in layer separation plane perpendicular to beam axis and displaced in said plane to produce non-overlapping local regions with disturbed chip structure topology and weakened atomic bonds. Said local regions are distributed over entire said plane. External effects are applied to layer being separated to destruct said weakened atomic bonds.
EFFECT: separation of lateral surface layers from semiconductor crystals.
9 cl, 14 dwg, 12 ex
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