SILICON ELECTROMAGNETIC CASTING PLANT Russian patent published in 2015 - IPC C01B33/02 C30B15/08 C30B29/06 

Abstract RU 2548982 C2

FIELD: process engineering.

SUBSTANCE: invention relates to electromagnetic casting of silicon semiconductor ingots used for production of silicon substrates for photo cells. Proposed plant includes furnace flask 100, current conducting crucible 200 arranged inside furnace flask 100 and element of induction coil 300 arranged around outer surface of said current conducting crucible 200. This plant can maintain constant pressure inside furnace flask with the help of inert gas and displace current conducting crucible 200 downward along flask central line with fusion of silicon by induction heating. The latter is produced by voltage across the terminals fed to the element of induction coil 300 to fuse silicon with further solidification of fused silicon. Note here that said element of induction coil 300 comprises multiple induction coils 310, 320 with different induction frequency. Said coils are arranged one above the other, the lowest one having high induction frequency sufficient to maintain mixing of fused silicon at low level and static state of fused silicon. This reduced crystalline defects in silicon ingots.

EFFECT: easy and accurate production, high quality.

15 cl, 6 dwg, 2 ex

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RU 2 548 982 C2

Authors

Kanehko Kedziro

Dates

2015-04-20Published

2009-11-20Filed