FIELD: metallurgy.
SUBSTANCE: invention relates to an electromagnetic silicon casting plant used at manufacture of silicon ingots for production of silicon substrates used in photocells. Plant 1 includes reaction vessel 100, current-carrying pot 200 located inside reaction vessel 100, inductance coil 300 installed on external circle of current-carrying pot 200, on external peripheral surface of current-carrying pot 200 at the height corresponding to position of a hardening boundary between molten silicon S' and hardened silicon ingot S there installed is stiff structure 810 from electrically insulating material, with that, the plant has a possibility of maintaining constant pressure inside reaction vessel 100 using inert gas 110 while hardening of silicon contained inside current-carrying pot 200 to silicon ingot S is being performed after its melting to molten silicon due to induction heating as a result of voltage supply terminals of inductance coil 300.
EFFECT: stiff structure installed at the height of a hardening boundary, which is maximum subject to external bending, allows preventing external bending of pot 200 used in plant 1.
12 cl, 5 dwg, 2 ex
