METHOD OF CREATING NANO-SIZED NANOSTRUCTURED OXIDE FILMS ON INP WITH APPLICATION OF VANADIUM PENTAXIDE GEL Russian patent published in 2015 - IPC H01L21/316 B82Y30/00 

FIELD: chemistry.

SUBSTANCE: invention relates to the field of production of nanostructures, namely to the synthesis of oxide films of the nanometre width on the surface of semi-conductors of class A^IIIB^V, and can be applied in the formation of electronics elements on the surface of semi-conductors, in high-frequency field transistors and long-wave lasers, as well as in solar cells. The method of creating nano-sized nano-structured oxide films on InP with the application of a vanadium pentaxide gel includes preliminary processing of the InP plates with an etchant of the composition H₂SO₄:H₂O₂:H₂O=2:1:1, their washing with distilled water, air-drying and following cooling to -30°C, precipitation of V₂O₅ gel from an aerosol for 3 min on InP plate, air-drying of the obtained samples for 1 h, their annealing and following thermo-oxidation at a temperature of 500 to 560°C for 60 min at the speed of an oxygen flow of 30 l/h. As annealing applied is pulse photonic processing in an air medium for 0.2-0.8 sec with the energy density from 30 to 115 J/cm².

EFFECT: formation of nano-sized nano-structured oxide films on the InP surface with the relief height not more than 20 nm by an economically effective and express method.

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