METHOD FOR PRODUCING NANOSCALE DIELECTRIC FILMS ON THE SURFACE OF GAAS USING A MAGNETRONICALLY FORMED MANGANESE DIOXIDE LAYER Russian patent published in 2019 - IPC H01L21/316 B82B1/00 

FIELD: nanotechnologies.

SUBSTANCE: use: to form dielectric films of nanometer thickness on the surface of semiconductors A^IIIB^V. Essence of the invention consists in the fact, that the method for producing nanoscale dielectric films on the surface of GaAs using a magnetronically formed manganese dioxide layer comprises pre-treating GaAs plates with concentrated hydrofluoric acid, washing them with distilled water, drying in air, forming a layer of MnO₂ with thickness of 30 ± 1 nm, subsequent thermo-oxidation at a temperature of 450 to 550 °C for 60 minutes at an oxygen flow rate of 30 L/h, according to the invention, MnO₂ layer are formed by magnetron sputtering of a target in argon atmosphere p_Ar ~ 10^-3 Torr.

EFFECT: technical result is the possibility of forming nanoscale structured dielectric films on the surface of GaAs with an average elevation difference of not more than 25 nm, thickness in the range from 75 to 200 nm, specific resistance of ~10¹⁰ Ohm * cm and dielectric strength of ~7×10⁶ V/cm.

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