FIELD: chemistry.
SUBSTANCE: method of precision doping thin films on an InP surface involves treatment with concentrated hydrofluoric acid for 10 minutes, washing the plate with distilled water, drying in air. Oxidation of the InP plate in a horizontal quartz reactor as a cover at a distance of 10 mm from a composition consisting of powders of active oxide V2O5 carefully mixed among themselves and an inert component Y2O3, placed in a quartz container. Oxidation is carried out at the temperature of 550°C at an oxygen flow rate of 30 l/h, for a ten minute interval.
EFFECT: creating the InP surface of thin films containing a specified amount of the doping component.
1 dwg, 1 tbl
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