METHOD OF CREATING NANOSCALE DIELECTRIC FILMS ON INP SURFACE USING MANGANESE OXIDE AND PHOSPHATE Russian patent published in 2019 - IPC H01L21/316 B82Y40/00 

FIELD: technological processes.

SUBSTANCE: use for the formation of nanoscale dielectric films. Essence of the invention lies in the fact that the method of creating nanoscale dielectric films on the surface of InP includes the preliminary treatment of polished InP plates with etchant H₂SO₄:H₂O₂H₂O=2:1:1 for 10–12 minutes, repeated washing in bidistilled water, air drying, forming a 25–30 nm thick MnO₂ layer on the surface of InP plates by the method of magnetron sputtering of the target, thermally oxidizing of samples at a temperature of 450–550 °C for 40–70 minutes in a stream of oxygen in the presence of manganese phosphate Mn₃(PO₄)₂.

EFFECT: enabling the formation of nanoscale dielectric films on the InP surface with a thickness in the range of 70–110 nm and a specific resistance of 4,8⋅10⁸ up to 1,5⋅10¹⁰ Ohm⋅cm.

1 cl, 4 dwg