FIELD: electricity.
SUBSTANCE: method of obtainment of nonvolatile storage element includes creation of lower conductive electrode, buffer insulating layer, layer with resistive switching and upper conductive electrode. According to the method, contact of nanosized scale is created to layer with resistive switching by means of electrical moulding of structure. Buffer insulating layer and layer with resistive switching are made of binary oxides using low-temperature vacuum-deposition technique. Availability of contact of nanosized scale to layer with resistive switching localises switch area.
EFFECT: increasing relation of resistances in low-resistance and high-resistance state, stabilising switch parameters, reducing risk of structure degradation, increasing total quantity of switch cycles.
3 cl, 2 dwg
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