METHOD OF FORMATION OF THIN-FILM MICROBRIDGES Russian patent published in 2015 - IPC H01L39/22 

FIELD: electricity.

SUBSTANCE: method of formation of thin-film microbridges is offered, according to which the superconductive material is applied on a substrate through a mask, and the mask are plates from refractory materials of pre-set geometry, between edges of plates at the reference fixed temperature T₁ the value of the primary fixed gap d₁, and its geometry, are formed, the size of the secondary gap is calculated, of the obtained d₂ microbridge width depending on the final fixed T₂ temperature by the formula d₂=d₁-{α₁L₁(T₂-T₁)+α₂L₂(T₂-T₁)}-α₃{(L₁+L₂+d₁)(T₂-T₁)}, where: L₁ - the distance from the line of fixing of the first plate to the gap, L₂ - the distance from the line of fixing of the second plate to the gap, T₁ - the reference fixed temperature, T₂ - the final fixed temperature, α₁ - temperature coefficient of thermal expansion of the first refractory plate, α₂ - thermal expansion coefficient of the second refractory plate, α₃ - thermal expansion coefficient of the substrate, then the following is performed: heating, a deposition or laser ablation of superconductive material of the fixed duration t and the fixed energy E determining the final fixed temperature T₂.

EFFECT: operation stability improvement.

2 cl, 6 dwg, 1 tbl