MANUFACTURING METHOD OF RESISTIVE STRAIN-GAUGE PRESSURE SENSOR BASED ON THIN-FILM NANO- AND MICROELECTROMECHANICAL SYSTEM Russian patent published in 2013 - IPC G01L9/04 B82B3/00 

FIELD: measurement equipment.

SUBSTANCE: after lead-out wires are connected to contact platforms of strain-gauge elements, they are subject to action of test reduced and increased temperatures; resistances of resistive strain gauges are measured at influencing temperatures; temperature coefficients of resistances of resistive strain gauges are determined in the range of influencing temperatures; using them, a criterion of timing stability is calculated as per the ratio of Ψ_τ01=|(α₂+α₄)-(α₁+α₃)|, where α₁, α₂, α₃, α₄ - temperature coefficient of resistance of the first, the second, the third, the fourth resistive strain gauge of NiMEMS respectively, and if \Ψ_τ01\<\Ψ_ταΔ1\, this assembly is transferred for further operations. Besides, strain-gauge elements, jumpers, contact platforms and lead-out wires are connected to the bridge measuring chain and subject to action of test, reduced and increased temperatures; values of initial output signals of the bridge measuring chain are measured at influencing temperatures; considering them, criterion of timing stability is calculated as per the ratio of Ψ_τ02=|(U_0T2 -U_01T)(T₂ -T₁)^-1U_H ^-1|, and if \Ψ_τ02\<\Ψ_ταΔ2\, assembly is transferred for further operations.

EFFECT: improving timing stability, overhaul period and service life.

2 cl, 2 dwg