SEMICONDUCTOR PRESSURE CONVERTER Russian patent published in 2015 - IPC G01L9/04 

FIELD: instrumentation.

SUBSTANCE: semiconductor pressure converter comprises a membrane with a thickened peripheral base. The membrane has thickness equal to thickness of strain gauges formed on the dielectric layer fixed onto the membrane. Strain gauges are combined using conductors having metallised contact sites connected with them into a bridge measuring circuit. The membrane comprises a profile with concentrators of mechanical stresses in areas of strain gauges location, which represents a combination of thinned sections and stiff centres. Besides, the converter comprises an additionally formed layer of dielectric fixed at the membrane side opposite to the formed strain gauges, and equal in thickness and properties to the dielectric layer fixed on the membrane at the side of the strain gauges.

EFFECT: increased reliability of a converter, increased strength of a membrane, higher stability of parameters at higher temperatures.

1 dwg