HIGH-TEMPERATURE SEMICONDUCTOR PRESSURE TRANSDUCER Russian patent published in 2014 - IPC G01L9/04 

FIELD: instrumentation.

SUBSTANCE: proposed transducer comprises membrane with bulged peripheral base. Said membrane has depth equal to that of strain gages made at the ply secured to said membrane. Strain gages are integrated by commutation buses with metalised contact sides to bridge measuring circuit. Membrane has section with mechanical strain concentrators at strain gage location points, said section being composed of the combination of thinned sections and stiff sections. Membrane and strain gages are made of polycrystalline diamond of one type of conductivity while ply secured at the membrane is composed of polycrystalline diamond of another type of conductivity.

EFFECT: expanded temperature range of measurements, reduced temperature error.

1 dwg