HIGH-TEMPERATURE SEMICONDUCTING PRESSURE CONVERTER Russian patent published in 2014 - IPC G01L9/04 

FIELD: measurement equipment.

SUBSTANCE: semiconducting pressure converter comprises a membrane with a profile representing a combination of thinned sections and stiff centres with concentrators of mechanical stresses in the place of location of strain resistance gauges. The membrane has thickness equal to height of strain resistance gauges, the surface of which is coated with a layer of silicon dioxide. Strain resistance gauges are formed on the silicon dioxide layer fixed on the membrane and are fixed of silicon. Strain resistance gauges are combined with the help of switching buses into a bridge measurement circuit. The layer of silicon dioxide is located under strain resistance gauges and switching buses. The surface of the membrane at the side of the strain resistance gauges is coated with an insulating layer of a non-alloyed silicon carbide around strain resistance gauges with thickness of at least the height of strain resistance gauges. At the periphery of the membrane there is a circuit of temperature compensation comprising strain resistance gauges having connected metallised contact sites for inclusion into the bridge circuit.

EFFECT: increased accuracy of a converter in the range of high temperatures.

1 dwg