SEMICONDUCTOR PRESSURE TRANSDUCER Russian patent published in 2012 - IPC G01L9/04 H01L29/84 

FIELD: physics.

SUBSTANCE: semiconductor pressure transducer has a diaphragm (1) with a thick peripheral base (2). The diaphragm has thickness equal to the thickness of tensoresistors (3) formed on a dielectric layer (4) attached to the diaphragm. The tensoresistors connected by conductors (5), having metal-coated contact pads (6) connected to them, into a measuring bridge circuit. The diaphragm has a profile with mechanical stress concentrators (7) where the tensoresistors are located, which is a combination of thin areas and rigid centres. The diaphragm and tensoresistors are made from undoped silicon carbide with carrier concentration of not more than 10¹⁶ cm^-3.

EFFECT: wider temperature range of measurements, longer stability of parameters of the transducer.

1 dwg