FIELD: process engineering.
SUBSTANCE: invention relates to devices for microwave plasma processing and can be used for production of solid-state devices of micro- and nanoelectronics, high-power discrete solid-state electronic devices, substrates for the latter operated under extreme conditions. Flat spiral antenna is used to feed microwave power into reaction-discharge chamber to fire the plasma to be used for processing purposes. Additionally, this device incorporates second flat spiral microwave antenna to heat the processed plate.
EFFECT: efficient feed of energy to silicon plate, efficient process control.
1 dwg
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