FIELD: process engineering.
SUBSTANCE: invention relates to etching and deposition of metal, semiconductors, dielectrics and lower pressures and can be used in production of solid-state device of high integration level. Proposed device comprises waveguide circuit enveloping reaction chamber sidewall. Several discharge tubes extend through waveguide circuit wide wall centre, perpendicular to the chamber. Magnetic field is applied to discharge tube inlet and outlet in waveguide circuit to induce conditions for electron cyclotron resonance. To allow identical plasma parameters, circular waveguide circuits are arranged and reaction chamber in tiers with the shift of discharge tubes in tiers relative to each other. Additionally, extra gas feed electrode is used.
EFFECT: better uniformity of silicon plate treatment, simplified plasma adjustment in every discharge tube.
2 dwg
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