MICROWAVE PLASMA PLATE PROCESSING DEVICE Russian patent published in 2015 - IPC H01L21/3065 

FIELD: process engineering.

SUBSTANCE: invention relates to etching and deposition of metal, semiconductors, dielectrics and lower pressures and can be used in production of solid-state device of high integration level. Proposed device comprises waveguide circuit enveloping the reaction chamber sidewall. Several discharge tubes extend through waveguide circuit wide wall centre, perpendicular to the chamber. Magnetic field is applied to discharge tube inlet and outlet in waveguide circuit to induce conditions for electron cyclotron resonance. Waveguide circular circuit is arranged at reaction chamber sidewall so that discharge tubes are located in one plane, parallel with processed plate. Flat two-start helical microwave antenna is arranged above processed plate, outside reaction chamber, at its cover, made of microwave-transmissive material. One more flat two-start helical microwave antenna is arranged above processed plate for its heating.

EFFECT: improved uniformity of processing, higher rate of ply formation.

2 dwg