SWITCHING CIRCUIT AND SEMICONDUCTOR MODULE Russian patent published in 2015 - IPC H01L29/12 H03K17/16 H01L29/78 H02M1/08 H03K17/687 H03K17/695 

Abstract RU 2557456 C2

FIELD: electricity.

SUBSTANCE: switching circuit comprises: the first switching element; the resistor inserted between the control electrode of the first switching element and the control circuit which controls the switching for the first switching element; both the first capacitor and the second switching element, connected between the control electrode of the first switching element and the electrode on the side with low potential of the first switching element. The electrode on the side with high potential of the second switching element is connected to the control electrode of the first switching element. The electrode on the side with low potential of the second switching element is connected to one electrode of the first capacitor. Another electrode of the first capacitor is connected to the electrode on the side with low potential of the first switching element. The control electrode of the second switching element is connected to the electrode of the resistor connected to the control circuit.

EFFECT: reduction of load on the circuit of the gate control signal shaper.

10 cl, 16 dwg

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RU 2 557 456 C2

Authors

Dzusi Jusuke

Murakami Josinori

Tanimoto Satosi

Sato Sindzi

Matsui Kokhei

Dates

2015-07-20Published

2012-05-11Filed