SEMICONDUCTOR NANO-STRUCTURE WITH COMPOSITE QUANTUM WELL Russian patent published in 2006 - IPC B82B1/00 

FIELD: physics of semiconductors, in particular, engineering of semiconductor nano-structures with quantum wells, possible use for realization of powerful semiconductor devices.

SUBSTANCE: semiconductor nanostructure contains quantum well with two-dimensional electron gas, made in form of layer of narrow-zoned semiconductor i-GaAs with forbidden zone E_g1 having thickness d₁ and levels of dimensional quantizing E_m1 - main and E_p1 - excited, sandwiched between two layers of semiconductor Al_xGa_1-xAs with forbidden zone E_g2>E_g1 and main level of dimensional quantizing E_m2 having thickness d₂ each, which is positioned between two barrier layers of wide-zoned semiconductor i-AlAs with thicknesses temperature and different_sp and forbidden zone E_g, one of which contains δ-Si layer of admixture at distance t^* from hetero-boundary i-AlAs and i-Al_xGa_1-xAs, and second one consists of non-alloyed i-AlAs spacer and layer AlAs(Si) alloyed homogeneously by silicon and layer i-GaAs covering the nanostructure. In composite quantum well of semiconductor nanostructure, formed on poly-insulating substrate GaAs(Cr) in form of serial layers i-GaAs(buffer)/i-AlAs(δ-Si)/i-AL_xGa_1-xAs/i-GaAs/i-Al_xGa_1-xAs/i-AlAs. By special selection of parameters E_g>E_g2>E_g1 and relation d₁/d₂, condition E_m2<E_p1 is maintained as well as localization of two-dimensional electrons with maximum in center of symmetry of composite quantum well on levels E_m1 and E_m2.

EFFECT: increased mobility of μ_t 2D electrons in quantum well with simultaneous increase of concentration n_S.

4 cl, 4 dwg