METHOD FOR REVERSIBLE VOLATILE SWITCHING OF THE RESISTIVE STATE OF A SOLID-STATE APPARATUS BASED ON A METAL-DIELECTRIC-METAL STRUCTURE Russian patent published in 2023 - IPC H01L21/8239 B82B3/00 

Abstract RU 2787740 C1

FIELD: electrical engineering.

SUBSTANCE: invention relates to methods for applying electrical apparatus and to nanocomposite materials based on dielectrics and metals for use in optoelectronics, memristor electronics, and optical computers (including neuromorphic optoelectronic computing systems). Method for reversible volatile switching of the resistive state of a solid-state apparatus based on a metal-dielectric-metal structure containing embedded mutually isolated metal nanoparticles with a size of 1 to 3 nm in the middle (in the dielectric layer), as well as at least one of the electrodes made of a conductive optical emission-transparent material; wherein, according to the invention, the reversible volatile switching of the resistive state of the apparatus is performed by illuminating the area of the dielectric containing nanoparticles with optical emission at the wavelength corresponding to the plasmon resonance wavelength in the mass of nanoparticles, while applying an electric voltage to the electrodes of the structure, so as to create an electric field with an intensity insufficient to change the resistive state of the structure in the absence of illumination in the dielectric layer.

EFFECT: possibility of improving the reproducibility of parameters of the memristor.

1 cl, 1 dwg

Similar patents RU2787740C1

Title Year Author Number
OPTICALLY CONTROLLED MEMRISTOR BASED ON THE ITO/ZrO(Y)/Si MDS STRUCTURE WITH Ge NANOISLANDS 2022
  • Koriazhkina Mariia Nikolaevna
  • Filatov Dmitrii Olegovich
  • Shenina Mariia Evgenevna
  • Antonov Ivan Nikolaevich
  • Kruglov Aleksandr Valerevich
  • Ershov Aleksei Valentinovich
  • Gorshkov Aleksei Pavlovich
  • Denisov Sergei Aleksandrovich
  • Chalkov Vadim Iurevich
  • Shengurov Vladimir Gennadevich
RU2803506C1
METHOD OF CONTROLLING OPERATION OF A METAL-INSULATOR-SEMICONDUCTOR MEMBRANE CAPACITOR STRUCTURE 2018
  • Tikhov Stanislav Viktorovich
  • Antonov Ivan Nikolaevich
  • Belov Aleksej Ivanovich
  • Gorshkov Oleg Nikolaevich
  • Mikhajlov Aleksej Nikolaevich
  • Shenina Mariya Evgenevna
  • Sharapov Aleksandr Nikolaevich
RU2706197C1
MEMRISTOR SWITCHING METHOD 2022
  • Filatov Dmitrii Olegovich
  • Gorshkov Oleg Nikolaevich
  • Koriazhkina Mariia Nikolaevna
  • Shenina Mariia Evgenevna
  • Antonov Ivan Nikolaevich, G. N. Novgorod, Ul. Artelnaia D.8. Korp. Kv.47
  • Lobanova Valeriia Alekseevna
  • Riabova Margarita Arturovna
  • Mikhailov Aleksei Nikolaevich
  • Sharapov Aleksandr Nikolaevich
RU2814564C1
SINGLE-ELECTRON MEMRISTOR (NANOCELL) AND METHOD OF USE 2023
  • Zhukov Nikolaj Dmitrievich
RU2823967C1
METHOD FOR PRODUCTION OF MEMRISTOR WITH NANOCONCENTERS OF ELECTRIC FIELD 2018
  • Mikhajlov Aleksej Nikolaevich
  • Belov Aleksej Ivanovich
  • Korolev Dmitrij Sergeevich
  • Zubkov Sergej Yurevich
  • Antonov Ivan Nikolaevich
  • Sushkov Artem Aleksandrovich
  • Sharapov Aleksandr Nikolaevich
  • Pavlov Dmitrij Alekseevich
  • Tetelbaum David Isaakovich
  • Gorshkov Oleg Nikolaevich
RU2706207C1
MEMRISTOR BASED ON MIXED OXIDE OF METALS 2011
  • Alekhin Anatolij Pavlovich
  • Baturin Andrej Sergeevich
  • Grigal Irina Pavlovna
  • Gudkova Svetlana Aleksandrovna
  • Markeev Andrej Mikhajlovich
  • Chuprik Anastasija Aleksandrovna
RU2472254C9
ACTIVE LAYER OF MEMRISTOR 2019
  • Ivanov Artem Ilich
  • Antonova Irina Veniaminovna
  • Soots Regina Alfredovna
RU2711580C1
METHOD FOR FORMING A SYNAPTIC MEMRISTOR BASED ON A NANOCOMPOSITE OF METAL-NONSTECHOMETRIC OXIDE 2017
  • Demin Vyacheslav Aleksandrovich
  • Emelyanov Andrej Vyacheslavovich
  • Kalinin Yurij Egorovich
  • Kashkarov Pavel Konstantinovich
  • Kopytin Mikhail Nikolaevich
  • Sitnikov Aleksandr Viktorovich
  • Rylkov Vladimir Vasilevich
RU2666165C1
METHOD OF DETERMINING ELECTROPHYSICAL PARAMETERS OF CAPACITOR STRUCTURE OF MEMRISTOR CHARACTERISING MOULDING PROCESS 2015
  • Tikhov Stanislav Viktorovich
  • Gorshkov Oleg Nikolaevich
  • Antonov Ivan Nikolaevich
  • Kasatkin Aleksandr Petrovich
  • Koryazhkina Mariya Nikolaevna
  • Sharapov Aleksandr Nikolaevich
RU2585963C1
MIXED METAL OXIDE-BASED MEMRISTOR 2013
  • Lebedinskij Jurij Jur'Evich
  • Zenkevich Andrej Vladimirovich
  • Markeev Andrej Mikhajlovich
  • Egorov Konstantin Viktorovich
RU2524415C1

RU 2 787 740 C1

Authors

Filatov Dmitrii Olegovich

Novikov Aleksei Sergeevich

Mariia Evgenevna

Antonov Ivan Nikolaevich

Kotomina Valentina Evg606440enevna

Dates

2023-01-12Published

2021-12-23Filed